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Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
Method of forming silicon oxy-nitride films by plasma-enhanced chemical vapor deposition
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机译:通过等离子体增强化学气相沉积形成氮氧化硅膜的方法
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摘要
A method of producing silicon oxy-nitride films is provided by utilizing a reactant gas mixture of silane, nitrous oxide and nitrogen at a low deposition temperature of less than 250° C. by flowing the reactant gas mixture through a gas inlet manifold which is also an upper electrode in a plasma-enhanced chemical vapor deposition chamber. The gas inlet manifold is the upper plate of a parallel plate plasma chamber for communicating the reactant gas into the chamber. The plate has a plurality of apertures, each comprising an outlet at a chamber or processing side of the plate and an inlet spaced from the processing side, with the outlet being larger than the inlet for enhancing the dissociation and reactivity of the gas.
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