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Zno varistor of low-temperature sintering ability
Zno varistor of low-temperature sintering ability
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机译:Zno压敏电阻的低温烧结能力
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摘要
Zinc oxide (ZnO) varistors containing vanadium oxide as the principal additive and one or more cobalt oxides and/or manganese oxides additives exhibit excellent nonlinear current-voltage characteristics. Preferably the varistor compositions are capable of being sintered at a temperature of from 900° C. to 950° C. The low-firing capability of the newly developed materials is attractive for the application in the multilayer chip varistor, because it can cofire with the silver (Ag) or palladium/silver (Pd/Ag) internal electrode instead of using the expensive palladium (Pd) or platinum (Pt) metal. With an appropriate combination of ZnO, vanadium oxide (V.sub.2 O.sub.5) and other oxide additives, a varistor sintered at 900° C. for 2 hours is obtained with a nonlinear coefficient 50 and a leakage current 20 &mgr; A/cm.sup.2.
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机译:包含氧化钒作为主要添加剂以及一种或多种氧化钴和/或氧化锰添加剂的氧化锌(ZnO)压敏电阻具有出色的非线性电流-电压特性。优选地,压敏电阻组合物能够在900℃至950℃的温度下烧结。新开发的材料的低烧制能力对于在多层片式压敏电阻中的应用是有吸引力的,因为它可以与多层压敏电阻共烧。银(Ag)或钯/银(Pd / Ag)内部电极,而不使用昂贵的钯(Pd)或铂(Pt)金属。通过适当组合ZnO,氧化钒(V 2 O 5)和其他氧化物添加剂,可获得在900°C烧结2小时的压敏电阻,其非线性系数> 50,漏电流< 20&mgr; A / cm.sup.2。
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