Circuitry and methods for dynamically sensing of data in a static random access memory cell

摘要

A sense amplifier sensing data on a pair of complimentary half- bitlines 301a, 301b connected to a static random access memory cell 300. First and second sensing transistors 405a, 405b amplify a voltage difference between first and second half-bitlines 301 during an active cycle. First and second restore transistors 404a, 404b pull the first and second half-bitlines to corresponding first and second voltage rails in response to the amplified voltage difference. SR Latch 406, 407 retains data from cycle to cycle.