The thin film field-effect transistor and its production manner, and use that transistor the non-volatile storage cell and the non-volatile storage

摘要

PURPOSE: To obtain improved FET characteristics by using a region near a surface of a silicon carbide layer as a channel region without diffusing a metal and oxygen within a ferroelectric film into a silicon carbide layer by forming a gate electrode on the silicon carbide layer which is formed on the substrate through the ferroelectric film, etc. ;CONSTITUTION: A title item is provided with a conductive type silicon carbide layer 14 which is formed on a surface of a substrate 11 and a pair of semiconductor thin films 13A and 13B which are formed on a surface of the substrate 11 so that they contact the silicon carbide layer 14 at a different position and become source/drain. Furthermore, it is provided with a ferroelectric film 15 which is formed in lamination on the silicon carbide layer 14 and a gate electrode 16 which is formed on the ferroelectric film 15. For example, the P-type silicon carbide layer 14 is formed on a surface of the P-type silicon substrate 11, a silicon oxide film 12 is formed on regions on both sides, and then a pair of N⁺-type polysilicon films 13A and 13B are formed on it.;COPYRIGHT: (C)1993,JPO&Japio