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dami - wafer and dami - the heat treatment manner which used the wafer

机译:达米-晶圆和达米-使用晶圆的热处理方式

摘要

PROBLEM TO BE SOLVED: To enable a dummy wafer to ensure a full mechanical strength even if the diameter of the dummy wafer, which is used in a heat-treating process for a semiconductor substrate, is formed in a diameter of 30 mm or longer. SOLUTION: A dummy wafer 12 mounted on a wafer boat, which is used in a heat-treating unit for a semiconductor wafer, along with the wafer is formed of a material such as a quartz. A reinforcing part 14 is provided on the surface on one side of the surfaces of the wafer 12. Notches 16 are respectively provided in each of the ends of the part 14. The wafer 12 is mounted on the boat in such a way that the supports of the boat and the notches 16 are engaged with each other.
机译:解决的问题:即使用于半导体衬底的热处理工艺中的虚拟晶片的直径形成为30mm或更长,也能够使虚拟晶片确保充分的机械强度。解决方案:安装在晶片舟皿上的虚拟晶片12与晶片一起用在半导体晶片的热处理单元中,该晶片由诸如石英的材料形成。在晶片12的表面的一侧的表面上设置有加强部分14。在部分14的每个端部中分别设有凹口16。以支撑的方式将晶片12安装在舟皿上。船的凹口16和凹口16彼此接合。

著录项

  • 公开/公告号JP3069350B1

    专利类型

  • 公开/公告日2000-07-24

    原文格式PDF

  • 申请/专利号JP19990230904

  • 发明设计人 南 眞嗣;

    申请日1999-08-17

  • 分类号H01L21/02;H01L21/22;H01L21/68;

  • 国家 JP

  • 入库时间 2022-08-22 02:05:42

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