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PLANE GRINDING METHOD, AND MIRROR POLISHING METHOD

机译:平面磨削方法和镜面抛光方法

摘要

PROBLEM TO BE SOLVED: To remove a ground streak trace with a small grinding amount by grinding a wafer surface with controlling cycle of the ground streak trace formed in the entire wafer surface ground by a grinding wheel to be less than a specific value.;SOLUTION: A grinding wheel 22 is fixed to the lower surface of an upper surface plate 14. A vacuum sucking mechanism capable of sucking and fixing a wafer W is provided on the upper surface of a lower surface plate 16. The wafer W to be ground is sucked or fixed to the upper surface of the lower surface plate 16 using the vacuum sucking mechanism. By rotating the upper and lower surface plate 14, 16, moving at least one surface plate vertically, and connecting it to the other surface plate by pressure, the surface of the wafer W fixed to the upper surface of the lower surface plate 16 is ground. At this time, as the grinding wheel 22, a resinoid grinding wheel is suitable. In addition, count of the grinding wheel 22 higher than #2000, fine particle size, is preferable. The wafer W surface is ground with controlling cycle of the ground streak trace formed in the entire wafer W surface ground by the grinding wheel 22 to be less than 1.6 mm.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过研磨晶片表面并用砂轮将整个晶片表面上形成的研磨痕迹轨迹的周期控制为小于特定值,以去除晶片上的研磨痕迹,以消除研磨痕迹。 :砂轮22固定于上面板14的下表面。在下面板16的上表面设有能够吸附固定晶片W的真空吸附机构。使用真空抽吸机构将其吸附或固定到下面板16的上表面。通过旋转上下表面板14、16,使至少一个表面板垂直移动,并通过压力使其与另一表面板连接,从而固定在下表面板16的上表面的晶片W的表面被研磨。 。此时,作为树脂砂轮22是合适的。另外,优选砂轮22的个数比#2000高,且粒径细。通过控制通过砂轮22在整个晶片W表面上形成的研磨条纹迹的周期小于1.6mm来对晶片W表面进行研磨;版权:(C)2000,JPO

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