PRODUCTION OF SINGLE CRYSTAL SILICON CARBIDE THIN FILM AND SINGLE CRYSTAL SILICON CARBIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To produce a single crystal silicon carbide thin film having a highly flat large area by reducing the warp caused by an internal stress at the time of film formation. ;SOLUTION: A single crystal silicon carbide thin film 2 formed on a silicon wafer 1 by epitaxial growth is sandwiched between a polycrystal silicon carbide board 3 and a porous carbon board 4 so that the single crystal silicon carbide thin film may be positioned downward, and the sandwiched single crystal silicon carbide thin film 2 is heated and pressurized at the temperature not lower than the melting point of silicon and not higher than the sublimation temperature of the silicon carbide, e.g. 1,500°C to reduce the warp and to flatten the film 2. The silicon wafer 1 is absorbed and removed by the porous carbon board 4, and the single crystal silicon carbide thin film 2 is obtained in a state in which the film 2 adheres to the polycrystal silicon carbide board 3.;COPYRIGHT: (C)2000,JPO