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METAL ULTRATHIN FILM SUPERCONDUCTOR AND MICRODISPLACEMENT MEASURING DEVICE USING MAGNETIC FIELD

机译:利用磁场的金属超薄膜薄膜超导体和微位移测量装置

摘要

PROBLEM TO BE SOLVED: To raise a transition temperature up to room temperatures using a metal or metal-state ultrathin film as a superconductivity is generated in the direction of the film surface of the ultrathin film in a structure of a dielectric body/the metal or metallic ultrathin film/a dielectric body, but in this case, the thinnner the film is, the higher this transition temperature to become the superconductivity transition temperature rises. ;SOLUTION: A superconductivity transition temperature has hitherto been 120K or thereabouts, but the superconductivity transition temperature of a metal or metal-state ultrathin film of a thickness thinner than one micron meter (μm) is heightened until room temperatures (23 to 25°C, roughly 300K) in this method. The generation of a Meissner effect is ascertained in addition to a quenching of an electrical resistance and a room temperature superconductivity has already been verified. Moreover, in order to measure the Meissner effect, a device for measuring a microdisplacement in a magnetic field using a laser displacement meter is manufactured. The quenching of the electrical resistance and the generation of the Meissner effect show the fact that the above ultrathin film is turned into a superconductor.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:使用金属或金属态的超薄膜将转变温度提高到室温,因为在电介质体/金属或金属的结构中沿超薄膜的膜表面方向产生超导性。金属超薄膜/电介质,但是在这种情况下,薄膜越薄,该转变温度越高,则超导转变温度升高。 ;解决方案:迄今为止,超导转变温度一直为120K左右,但是厚度小于1微米(μm)的金属或金属态超薄膜的超导转变温度一直升高到室温(23至25°C) ,大约300K)。除了电阻的淬灭外,还确定了迈斯纳效应的产生,并且已经证实了室温下的超导性。此外,为了测量迈斯纳效应,制造了一种使用激光位移计来测量磁场中的微位移的装置。电阻的淬灭和迈斯纳效应的产生表明了上述超薄膜变成超导体的事实。;版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000299506A

    专利类型

  • 公开/公告日2000-10-24

    原文格式PDF

  • 申请/专利权人 HINO TARO;HINO MARISHI;

    申请/专利号JP19990142171

  • 发明设计人 HINO TARO;

    申请日1999-04-14

  • 分类号H01L39/02;G01B11/14;H01B13/00;H01F1/00;H01F6/00;H01L39/12;

  • 国家 JP

  • 入库时间 2022-08-22 02:02:07

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