首页> 外国专利> FIELD EMISSION TYPE ELECTRON SOURCE AND ITS MANUFACTURE, AND PLANAR LIGHT-EMITTING DEVICE, DISPLAY DEVICE AND SOLID VACUUM DEVICE THEREOF

FIELD EMISSION TYPE ELECTRON SOURCE AND ITS MANUFACTURE, AND PLANAR LIGHT-EMITTING DEVICE, DISPLAY DEVICE AND SOLID VACUUM DEVICE THEREOF

机译:场发射型电子源及其制造,及其平面发光器件,显示器件和固体真空器件

摘要

PROBLEM TO BE SOLVED: To provide an inexpensive field emission type electron source which enables stable and efficient emission of electrons. ;SOLUTION: A rapidly heat-oxidized porous poly-silicon layer 6 is formed on the front face of an N-type silicon substrate 1 which is a conductive substrate, and a gold thin film 7 which is a metal thin film is formed on the rapidly heat-oxidized porous poly-silicon layer 6. An ohmic electrode 2 is formed on the rear face of the N-type silicon substrate 1. Voltage is impressed between the gold thin film 7 and the ohmic electrode 2 with the gold thin film 7 which is a positive electrode with respect to the N-type silicon substrate 1, thereby the electrons injected from the N-type silicon substrate 1 into the rapidly heat- oxidized porous poly-silicon layer 6 are emitted through the gold thin film 7.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:提供一种廉价的场发射型电子源,该电子源能够稳定且有效地发射电子。 ;解决方案:在作为导电衬底的N型硅衬底1的正面上形成快速热氧化的多孔多晶硅层6,并在其上形成作为金属薄膜的金薄膜7。快速热氧化的多孔多晶硅层6。在N型硅衬底1的背面上形成欧姆电极2。在金薄膜7和带有金薄膜7的欧姆电极2之间施加电压。相对于N型硅衬底1为​​正电极,由此从N型硅衬底1注入到快速热氧化的多孔多晶硅层6中的电子通过金薄膜7发射。版权:(C)1999,日本特许厅

著录项

  • 公开/公告号JPH11329213A

    专利类型

  • 公开/公告日1999-11-30

    原文格式PDF

  • 申请/专利权人 MATSUSHITA ELECTRIC WORKS LTD;

    申请/专利号JP19980272340

  • 发明设计人 KOMODA TAKUYA;KOSHIDA NOBUYOSHI;

    申请日1998-09-25

  • 分类号H01J1/30;H01J9/02;H01J19/24;H01J21/04;H01J21/10;H01J29/04;H01J31/12;

  • 国家 JP

  • 入库时间 2022-08-22 02:01:58

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