VOLATILE MEMORY AND EMBEDDED DYNAMIC RANDOM-ACCESS MEMORY

摘要

PROBLEM TO BE SOLVED: To set a refresh region, to be refreshed actually, from the outside of a DRAM. ;SOLUTION: A refresh control register 21 is installed in such a way that a refresh control bit which is given from the outside and which indicates a region to be refreshed is stored. A refresh-address judgment circuit 22 is installed in such a way that a content RCB which is stored in the refresh control register 21 is compared with a refresh address RAi which is output by a refresh address generation circuit 11. An internal timing control circuit 5A stops the operation of a row decoder 3 and that of a sense amplifier 4 according to the judgment result of the refresh-address judgment circuit 22.;COPYRIGHT: (C)2000,JPO