首页> 外国专利> METHOD AND DEVICE FOR SEMICONDUCTOR MANUFACTURING CONDITIONS, SEMICONDUCTOR MANUFACTURING EQUIPMENT USING THE DEVICE AND SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE SEMICONDUCTOR MANUFACTURING EQUIPMENT

METHOD AND DEVICE FOR SEMICONDUCTOR MANUFACTURING CONDITIONS, SEMICONDUCTOR MANUFACTURING EQUIPMENT USING THE DEVICE AND SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE SEMICONDUCTOR MANUFACTURING EQUIPMENT

机译:用于半导体制造条件的方法和设备,使用该设备的半导体制造设备以及由半导体制造设备制造的半导体基板

摘要

PROBLEM TO BE SOLVED: To provide a setting method for semiconductor manufacturing conditions, a device, a semiconductor manufacturing equipment by which a plasma process of a semiconductor can be performed under stable conditions and a semiconductor substrate. ;SOLUTION: This method comprises a light-emitting means 5, spectrum means 28 by which plasma transmitted light is spectrally diffracted, light-detecting means 30 for converting transmitted light intensity to an electrical signal, transmitted light intensity calculating means 35 for calculating transmitted light intensity, based on the electrical signal, an absorbed wavelength calculating means 35 for calculating the absorbed wavelength based on the transmitted light intensity 35, corresponding to a wavelength selecting means 35 for selecting more than two corresponding wavelengths, normal transmitted light data making means 35 for making normal transmitted light data which is the relation between parameters and each corresponding wavelength, a determination means 35 for permissible range of the transmitted light, by which the permissible range of the transmitted light is determined, calculating means 35 for the transmitted light intensity during process with which the transmitted light intensity during the substrate 7 is processed, and candidate selecting means 35 for selecting candidate parameters which correspond to the intensity during the process.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:为了提供一种半导体制造条件的设定方法,一种装置,一种半导体制造设备和一种半导体衬底,通过该方法,可以在稳定的条件下进行半导体的等离子体处理。 ;解决方案:该方法包括发光装置5,光谱装置28,通过该装置光谱对等离子体透射光进行光谱衍射;光检测装置30,用于将透射光强度转换为电信号;透射光强度计算装置35,用于计算透射光。强度,基于电信号,用于基于透射光强度35计算吸收波长的吸收波长计算装置35,对应于用于选择两个以上相应波长的波长选择装置35,用于取作为参数和每个相应波长之间关系的正常透射光数据,确定透射光的允许范围的确定装置35,通过该确定装置确定透射光的允许范围,处理期间的透射光强度的计算装置35透过光对基板7的强度进行处理,并选择与处理中的强度相对应的候选参数的候选选择单元35。COPYRIGHT:(C)2000,JPO

著录项

  • 公开/公告号JP2000021855A

    专利类型

  • 公开/公告日2000-01-21

    原文格式PDF

  • 申请/专利权人 HAMAMATSU PHOTONICS KK;

    申请/专利号JP19980184647

  • 发明设计人 YOSHIDA HARUMASA;

    申请日1998-06-30

  • 分类号H01L21/3065;H01L21/203;H01L21/205;

  • 国家 JP

  • 入库时间 2022-08-22 02:01:26

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