HETERO-JUNCTION BIPOLAR TRANSISTOR(HBT) CIRCUIT, CIRCUIT DESIGNING METHOD THEREOF AND OPERATION ANALYZING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To compensate and control temp. characteristics of a semiconductor device by setting a bias resistance value connected to the base terminal of the grounded emitter semiconductor device the temp. dependence of the collector current disappears at a specified operating point of the semiconductor device.;SOLUTION: A d-c voltage source Vbe and a bias resistance R are connected in series to the base terminal of a grounded emitter semiconductor device (HBT), a d-c voltage source Vcc and a series resistance RL are connected to the collector terminal, and the value of the bias resistance R to be connected to HBT is set to be equal to a threshold RT to thereby compensating the change of an electron injection current against the temp. change and also the drift of the collector current. Hence the temp. dependence of the collector current disappears at a specified operating point of HBT, thus realizing the compensation of the drift (temp. characteristic) of the operating characteristic due to the temp. change. Thus it is possible to avoid the thermal runaway of HBT and improve the pulse response characteristic.;COPYRIGHT: (C)2000,JPO