首页> 外国专利> Probe for atomic force microscope for scanning tunneling electron microscope and silicon compound containing 3-thienyl group

Probe for atomic force microscope for scanning tunneling electron microscope and silicon compound containing 3-thienyl group

机译:用于扫描隧道电子显微镜的原子力显微镜探针和含有3-噻吩基的硅化合物

摘要

According to the invention, a probe for an atomic force microscope comprising a means for tunneling current is disclosed. The probe has a metal tip which is covered with a monomolecular film. The body of the probe is covered with a monomolecular laminated film, wherein conductive molecules are fixed on the the monomolecular film and/or the said monomolecular laminated film. The monomolecular laminated film has a closslinked electroconductive surface. The monomolecular laminated film is fixed on the metal by a covalent bond comprising a siloxane base (-SiO-), and the laminated part of the molecule is also chemically fixed on the metal surface by a covalent bond comprising a siloxane base (-SiO-). The probe of this invention is durable and can be put to practical use, because the films are surface conductive rather than conductive through its thickness. Moreover, compared with a conventional probe, since this probe does not metal deposited on the surface, it has high reproducibility with less process step to manufacture the probe. IMAGE
机译:根据本发明,公开了一种用于原子力显微镜的探针,其包括用于隧穿电流的装置。探针的金属尖端覆盖有单分子膜。探针的主体被单分子层压膜覆盖,其中导电分子固定在单分子膜和/或所述单分子层压膜上。单分子层压膜具有紧密连接的导电表面。单分子层压膜通过包含硅氧烷基(-SiO-)的共价键固定在金属上,分子的层压部分也通过包含硅氧烷基(-SiO-)的共价键化学固定在金属表面上。 )。本发明的探针是耐用的并且可以投入实际使用,因为该膜是表面导电的而不是贯穿其厚度导电的。此外,与常规探针相比,由于该探针不会在表面上沉积金属,因此具有较高的可重复性,并且制造探针的工艺步骤更少。 <图像>

著录项

  • 公开/公告号JP2992141B2

    专利类型

  • 公开/公告日1999-12-20

    原文格式PDF

  • 申请/专利权人 MATSUSHITA DENKI SANGYO KK;

    申请/专利号JP19910247970

  • 发明设计人 NAKAGAWA TOORU;

    申请日1991-09-26

  • 分类号G01B21/30;C07F7/12;C09D183/04;G01B7/34;

  • 国家 JP

  • 入库时间 2022-08-22 01:57:52

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