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Covering wire for current collecting electrode, photovoltaic element using the covering wire for current collecting electrode, and method of manufacturing the same
Covering wire for current collecting electrode, photovoltaic element using the covering wire for current collecting electrode, and method of manufacturing the same
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机译:集电电极用包覆线,使用该集电电极用包覆线的光电元件及其制造方法
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摘要
A photovoltaic element having a high release voltage is provided by inhibiting the injection of carrier to p-type semiconductor located at the upmost surface of the generation layer from the upper electrode. The photovoltaic element according to the present invention, in which an n-type semiconductor which is supposed to be represented by "n", an i-type semiconductor which is supposed to be represented by "i", and p-type semiconductor which is supposed to be represented by "p", are laminated in this order on to a substrate to form a structure comprising a nip junction, and a generation layer containing at least one of the structure is provided; that the upper electrode is placed on the p-layer located at the upmost surface of the generation layer to form the photovoltaic element, is characteristic in that the p-layer positioned at the upmost surface of the generation layer is composed of a first p-layer containing crystal that is connected with the i-layer and a second p-layer comprising amorphous that is connected with the upper electrode.
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