首页> 外国专利> LIGHT CONDENSING AND HEATING APPARATUS AND LIGHT CONDENSING AND HEATING TYPE ZONE MELTING APPARATUS AS WELL AS SINGLE CRYSTAL AND HIGH-PURITY METAL PRODUCED BY THE SAME

LIGHT CONDENSING AND HEATING APPARATUS AND LIGHT CONDENSING AND HEATING TYPE ZONE MELTING APPARATUS AS WELL AS SINGLE CRYSTAL AND HIGH-PURITY METAL PRODUCED BY THE SAME

机译:聚光加热装置,聚光加热型区域熔融装置以及由其制造的单晶和高纯金属

摘要

PROBLEM TO BE SOLVED: To suppress the spread of a thermal distribution in the growth axis direction of a single crystal and to increase production per unit time without degrading the quality of the single crystal by providing the circumference at the main shaft of the inside of a spheroidal mirror with a shielding plate having a diaphragm mechanism and changing its aperture diameter for the single crystals of various kinds. ;SOLUTION: The disk-shaped shielding plate 17 having the diaphragm mechanism is mounted around the vertical main shaft of the spheroidal mirror 5. A highly heat resistant metal, such as molybdenum or stainless steel, is used for the material of the shielding plate 17. Three supporting rods 19 are mounted at the shielding plate 17. These supporting rods 19 are hooked at the mouth of a transparent barrier 13. The shielding plate 17 is provided with the diaphragm mechanism, by which the regulation of the heat distribution for the single crystals of various kinds is made possible. A knob for diaphragm regulation is introduced to the outside of the light condensing and heating apparatus along the inside surface of the transparent barrier 13 and the aperture diameter 18 is regulated by the diaphragm of the shielding plate 17. As a result, the single crystal growth may be stably executed by controlling the length of a melting zone.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过在单晶硅的内部的主轴上设置周长来抑制单晶的生长轴方向上的热分布的扩散,并且在不降低单晶质量的情况下增加单位时间的产量。带有屏蔽板的球面镜,该屏蔽板具有光阑机构,并改变了各种单晶的孔径。 ;解决方案:具有光阑机构的圆盘形屏蔽板17安装在球面镜5的垂直主轴周围。屏蔽板17的材料采用高耐热金属,例如钼或不锈钢。 。三个支撑杆19安装在屏蔽板17上。这些支撑杆19钩在透明屏障13的开口处。屏蔽板17设置有膜片机构,通过该膜片机构调节单个构件的热分布。各种晶体成为可能。沿着透明屏障13的内表面将用于光阑调节的旋钮引入到聚光和加热设​​备的外部,并且通过屏蔽板17的光阑来调节孔径18。结果,单晶生长可以通过控制熔化区的长度来稳定地执行。;版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000007484A

    专利类型

  • 公开/公告日2000-01-11

    原文格式PDF

  • 申请/专利权人 ADVANTEST CORP;

    申请/专利号JP19980171778

  • 发明设计人 FUJINO MASAO;HORI HISAO;

    申请日1998-06-18

  • 分类号C30B13/22;H05B3/10;

  • 国家 JP

  • 入库时间 2022-08-22 01:57:47

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