Method of photomasking of photosensitive polyimides with organometal compounds for photolithography processes in silicon technology

摘要

It is a single-layer photolithography process on irregular topographies that is based on the surface silaning of the methacrylate groups of the precursor polyamic acid of the photosensitive polyimide so that they act as a mask during the plasma development in RIE mode, with oxygen as the reactive gas. The process makes it possible to obtain positive or negative patterns with regard to the mask, using the same photosensitive precursors, since this depends only on the sequence of performing the steps of exposure and silaning. This method can be used in the photodefinition of polymer layers of any given thickness. Application in the encapsulation of chemical sensors, multichip modules, microelectronic technology, electronic sectors, integrated optics.