APPARATUS AND METHOD FOR TREATMENT OF SUBSTRATE SURFACE USING PLASMA FOCUSED BELOW ORIFICE LEADING FROM CHAMBER INTO SUBSTRATE CONTAINING AREA

摘要

A radiofrequency wave apparatus and methodwhich provides a relatively high concentration ofreactive species from a plasma for the treatment of asurface particularly of a substrate (31) with a complexgeometry in a holder (62) which masks a portion of thesubstrate. The radiofrequency waves are preferablymicrowaves or UHF waves. The apparatus and method isparticularly useful for rapid plasma assisted chemicalvapor deposition of diamond on a portion of thesubstrate, particularly on surfaces of objects withcomplex geometries such as a drill (60) or a seal ring(64).