PREPARATION OF COPPER-INDIUM-GALLIUM-DISELENIDE PRECURSOR FILMS BY ELECTRODEPOSITION FOR FABRICATING HIGH EFFICIENCY SOLAR CELLS

摘要

A photovoltaic cell (10) exhibiting an overall conversion efficiency of 13.6 % is prepared from a copper-indium-gallium-diselenide precursor film (18). The film (18) is fabricated by first simultaneously electrodepositing copper, indium, gallium and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film (18). The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film (18) to approximately Cu(In1-x,Gax)Se2, with the ratio of Ga/(In+Ga) being approximately 0.39.