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Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
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机译:在半导体的化学机械抛光过程中提高金属去除率的方法
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摘要
A method for enhancing the removal rate of a metal barrier layer during CMP includes providing a semiconductor wafer having an insulator layer, a metal barrier layer formed on at least a portion of the insulation layer and a conductive layer formed thereon and contacting the semiconductor wafer with a chemical-mechanical polishing slurry containing a metal removal-enhancing amount of at least one chelating agent.
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