PROCESS FOR FORMATION OF POLY CRYSTALLINE SILICON FILM

摘要

The present invention relates to a method of forming a polycrystalline silicon film, and an electric field is formed in an amorphous silicon film to prevent a decrease in the mobility of electrons or holes according to a grain growth direction. Direction. Therefore, a polycrystalline silicon film suitable for the operation characteristics of the device can be easily formed. The present invention also relates to a method of forming a polycrystalline silicon film which can reduce a production cost and improve a device yield by forming a polycrystalline silicon film of good quality by performing a heat treatment at a lower temperature than a conventional one for a short time.