SILICON FEA WITH FOCUSING GATE AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a method of manufacturing a silicon FEA having a focusing gate, the method comprising: forming an oxide film 11 on a silicon substrate 10 and patterning the disk into a disk shape; Anisotropically etching the silicon substrate 10 to a predetermined depth using the oxide film 11 as a mask; Applying the nitride film 12 to form the nitride film 12 only on the sidewalls using a photoresist etch-back process; Isotropically etching the silicon substrate 10; Removing the nitride film 12 from the side portion and thermally oxidizing the thermal oxide film 13 to form a pointed tip 14; Applying polycrystalline silicon 15 on the thermal oxide film 13, and forming a gate electrode using a photoresist etch-back process; After depositing the nitride film 16, forming the nitride film 16 only on the sidewalls using a photoresist etch-back process; Depositing an upper focusing gate oxide film 17 and a metal film 18 and forming an upper focusing gate using a photoresist etch-back process; Removing the nitride film 16 around the tip using a wet etching process; And lifting off the thermal oxide film 13 around the tip to expose the pointed emitter tip 14.