首页> 外国专利> THIN CONDUCTIVE FILM AND MAGNETIC RESISTANCE EFFECT ELEMENT USING THE THIN CONDUCTIVE FILM AND METHOD FOR MAKING THE THIN CONDUCTIVE FILM

THIN CONDUCTIVE FILM AND MAGNETIC RESISTANCE EFFECT ELEMENT USING THE THIN CONDUCTIVE FILM AND METHOD FOR MAKING THE THIN CONDUCTIVE FILM

机译:使用该薄导电膜的薄导电膜和磁阻效应元件以及制造该薄导电膜的方法

摘要

PURPOSE: A method for making a thin conductive film applies a compressive stress about a conductive layer when forming a conductive layer, and prevents a film separation of the conductive layer. CONSTITUTION: When forming a conductive layer of a magnetic resistance effect element in a DC magnetron sputtering device, a tension stress is applied on the conductive layer. Therefore, a prior method easily occurs a film separation of the conductive layer. A lattice plane spacing of a vertical direction of the conductive layer(23) is larger than that of a bulk material. Thereby, a compressive stress is applied on the conductive layer, thereby preventing a film separation.
机译:用途:一种用于形成导电薄膜的方法,当形成导电层时,会在导电层上施加压缩应力,并防止导电层的膜分离。构成:在直流磁控溅射设备中形成磁阻效应元件的导电层时,会在导电层上施加张应力。因此,现有方法容易发生导电层的膜分离。导电层(23)的垂直方向的晶格间隔大于块状材料的晶格间隔。由此,在导电层上施加压应力,从而防止膜分离。

著录项

  • 公开/公告号KR20000006501A

    专利类型

  • 公开/公告日2000-01-25

    原文格式PDF

  • 申请/专利权人 ALPS ELECTRIC CO. LTD.;

    申请/专利号KR19990024433

  • 发明设计人 GANNO HIROYUKI;

    申请日1999-06-26

  • 分类号G11B5/39;

  • 国家 KR

  • 入库时间 2022-08-22 01:46:14

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