首页> 外国专利> CYLINDER TYPE CAPACITOR HAVING HEMISPHERICAL GRAIN SILICON AND MANUFACTURING METHOD THEREOF

CYLINDER TYPE CAPACITOR HAVING HEMISPHERICAL GRAIN SILICON AND MANUFACTURING METHOD THEREOF

机译:具有半球晶硅的圆筒型电容器及其制造方法

摘要

PURPOSE: A cylinder type capacitor and a method for manufacturing the cylinder type capacitor are provided to enhance the capacitance of the capacitor by preventing the short caused by the contact between hemispherical grain silicon and a capacitor electrode. CONSTITUTION: A cylinder type capacitor comprises a lower electrode, a dielectric film and an upper electrode formed in a semiconductor substrate(100). The lower electrode is formed at an inner surface thereof with hemispherical grain silicon(124). The dielectric film consisting of a first nitride film(126), a second nitride film(132) and an oxide film(134) is formed in the lower electrode. In addition, the dielectric film consisting of a second nitride film(132) and an oxide film(134) is formed at an outer portion of the lower electrode.
机译:目的:提供一种圆柱型电容器和一种用于制造圆柱型电容器的方法,以通过防止由于半球形晶粒硅与电容器电极之间的接触而引起的短路来增强电容器的电容。组成:圆柱型电容器包括下电极,介电膜和上电极,该下电极形成在半导体衬底(100)中。下电极在其内表面形成有半球形晶粒硅(124)。在下部电极中形成由第一氮化膜(126),第二氮化膜(132)和氧化膜(134)构成的电介质膜。另外,在下部电极的外部形成由第二氮化膜(132)和氧化膜(134)构成的电介质膜。

著录项

  • 公开/公告号KR20000060687A

    专利类型

  • 公开/公告日2000-10-16

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO LTD.;

    申请/专利号KR19990009222

  • 发明设计人 YOO YEONG SEOP;SHIN HYEON BO;

    申请日1999-03-18

  • 分类号H01L21/8242;

  • 国家 KR

  • 入库时间 2022-08-22 01:45:16

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