SOI Treating method of nitride film and manufacturing method for SOI wafer using the same

摘要

Disclosed are a surface treatment method of an insulating film and a method of manufacturing an SOI wafer using the same. In the present invention, in the method for treating the surface of the insulating film formed on the wafer to be bonded to manufacture the SOI wafer, RCA cleaning the insulating film surface on the wafer, and removing the insulating film by dry etching from the top by a predetermined thickness. Steps. According to the present invention, a PBSOI wafer can be efficiently manufactured without a bonding defect using a smart cut process.