A FABRICATION METHOD AND DEVICE OF MODULATOR INTEGRATED DFB LASER USING BUTT-COUPLING

摘要

The present invention relates to crystals generated during butt-coupling crystal growth of a stressed multi-quantum well structure in fabricating integrated circuits of DFB lasers and electro-absorption optical modulators. In order to eliminate the defects, the reliability defects and the optical coupling characteristics of the device are removed by removing the portions in which the crystal defects are generated by reactive ion etching or wet etching and removing the crystal defects through the growth of the semi-insulated InGaAsP waveguide layer and the InP clad layer. It relates to a manufacturing method of increasing the height and an optical modulator integrated device manufactured by the method.