Method for the in-situ fabrication of DFB lasers

摘要

The invention relates to a method for fabricating a structure in a semiconductor material. At least one etching step is carried out in-situ in an epitaxy installation and tertiary butyl chloride is used as the etchant. The at least one etching step produces at least one grating structure of a DFB laser. This provides an efficient method for fabricating DFB lasers.