method of determining the parameters of the boundary conditions at the semiconductor insulator structures.

摘要

method of determining the parameters of the boundary conditions at the semiconductor insulator tir structures, including a lodge at the u0438u0441u0441u043bu0435u0434u0443u0435u043cu0443u044e structure the tour, which is at a temperature t, pressure to limit the boundary conditions of the charge carriers, and u043eu0431u0435u0434u043d u044fu044eu0449u0435u0433u043e voltagethe heating structure after the relaxation current with a constant speed u03b2 while maintaining high capacity of structure and the temperature z u0438u0441u0438u043cu043eu0441u0442u0438 arising u043du0435u0440u0430u0432u043du043eu0432u0435u0441u043du043eu0433u043e current j (t), and the fact that, in order to improve the accuracy of determining the parameters in their dependence of j (t) define u0435u043bu0438u0447u0438u043du0443 energy efrom the empty and filled with the temperature Tu043fu043eu0433u0440u0430u043du0438u0447u043du044bu0435 state, cooled to the initial temperature t structure, set up the tension so you identities in which the position of the fermi level Fu043du0430 section as well as eafter the relaxation of current re heating structure with a constant speed while maintaining its high capacity u03b2 permanence and filming u0442u0435u043cu043fu0435u0440u0430u0442u0443u0440u043d the dependence of equilibrium. under the current j,establish the correspondence between the number of u0442u043eu0447u0435u043au043du0430 scale temperature dependence of j (t ') and a number of u0442u043eu0447u0435u043au043du0430 scale temperatures (j (t') of the u0441u043eu043eu0442u043du043eu0448u0435u043du0438u044fu0438 find dependence u0441u0435u0447u0435u043d and capture of energy Eu043fu043e u0444u043eu0440u043cu0443u043bu0435u0433u0434u0435; n is the effective density of states in the n - conductivity; concentration of shallow donors; q is the charge of the electron. u03a6 - surface potential act as,ensuring the equality of Fu0438 Eu043fu0440u0438 t; v is the thermal velocity of major carriers charge, k is the boltzmann constant.