Metal-containing layers produced especially for diffusion barriers, contact layers and/or anti-reflection layers in CMOS circuits, DRAM memory chips or embedded DRAM chips

摘要

Metal-containing layers are produced by high temperature metal layer deposition, followed by cooling in a nitrogen-containing atmosphere to form a metal nitride layer. Preferred Features: The metal layer is a tantalum, molybdenum, tungsten or especially titanium layer formed by sputter deposition on a silicon substrate at above 300 deg C. The titanium layer is especially cooled in a nitrogen- and hydrogen-containing atmosphere, heat treated to form a titanium silicide layer at the layer/substrate interface and wet chemically etched to remove the nitride layer.