Memory of multilevel quantum dot structure with conductive layers removed to form mask for source/drain

摘要

Memory of a multilevel quantum dot structure is made by forming an insulating layer (12) on a substrate (11) followed by a conductive layer (13) and a second insulating layer (18). The process can be repeated. The conductive layers are agglomerated to form quantized dot layers. Conductive layers are removed to form control gate and floating gate (15) which are used as a mask to form source/drain impurity regions (16,17) in the semiconductor substrate (11).