Thermoelectric rectifier material used as n-type semiconductor material in thermoelectric rectifier module comprises cobalt antimonide doped with a specified quantity of nickel

摘要

A thermoelectric rectifier material comprises cobalt antimonide doped with a specified quantity of nickel. A thermoelectric rectifier material, for use as an n-type semiconductor material in a thermoelectric rectifier module, has the formula Co1-xNixSby, where x = 0.03 to 0.09 exclusive and y = 2.7 to 3.4 exclusive. An Independent claim is also included for production of the above n-type thermoelectric rectifier material by molding and sintering of a powder mixture of CoSb3 and Ni.