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Semiconductor wafer exposure device for photolithographic process in semiconductor component manufacture uses detection and analysis of light reflected from photoresist layer for controlling shutter in path of exposure beam

机译:用于半导体部件制造中的光刻工艺的半导体晶片曝光装置使用从光致抗蚀剂层反射的光的检测和分析来控制曝光光束路径中的快门

摘要

The exposure device has a carrier (1) for positioning the semiconductor wafer (3) in 2 coordinate directions and a light beam device (5,19) for directing a light beam onto the semiconductor wafer via a mask (9), with detection of the light reflected from a photoresist layer of the semiconductor wafer via a light detector (13) coupled to an analyser (15) providing a control signal for an exposure control (17), used to operate a shutter (19) in the path of the exposure beam. An Independent claim for a semiconductor wafer exposure method is also included.
机译:曝光装置具有用于在两个坐标方向上定位半导体晶片(3)的载体(1)和用于通过掩模(9)将光束引导到半导体晶片上的光束装置(5,19),以检测半导体晶片的光致抗蚀剂层经光检测器(13)反射的光,该光检测器与分析器(15)耦合,提供用于曝光控制(17)的控制信号,用于在光路中操作快门(19)。曝光光束。还包括对半导体晶片曝光方法的独立权利要求。

著录项

  • 公开/公告号DE19950987A1

    专利类型

  • 公开/公告日2000-07-13

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD. SUWON;

    申请/专利号DE1999150987

  • 发明设计人 SON TAEK-SOO;PARK TAE-SIN;

    申请日1999-10-22

  • 分类号G03F7/20;

  • 国家 DE

  • 入库时间 2022-08-22 01:41:57

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