Copper connection film, e.g. for an ultra large scale integration, is produced by high pressure grain growth heat treatment of a deposited film while suppressing pore formation

摘要

Copper connection film production, involves high pressure grain growth heat treatment of a deposited film while suppressing pore formation. A copper or copper alloy connection film, covering an insulating film on a substrate and filling a substrate hole or groove, is formed by: (a) depositing the copper (alloy) by plating or chemical vapor deposition (CVD) within the hole or groove and on the surface of either a barrier layer on the insulating film or a seeding layer on the barrier layer; and (b) heating the entire substrate body in a gas atmosphere under high pressure to cause grain growth in the copper (alloy) while suppressing pore formation, so that the entire substrate surface and the hole or groove interior are covered with a pore-free copper (alloy) film.