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semiconductor pressure transducers with single crystal silicon membrane, and strain gauges and manufacturing process to result
semiconductor pressure transducers with single crystal silicon membrane, and strain gauges and manufacturing process to result
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机译:具有单晶硅膜的半导体压力传感器,应变仪及其制造工艺
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摘要
A semiconductor pressure sensor (10) utilizes single-crystal silicon piezoresistive gage elements (18) dielectrically isolated by silicon oxide (17) from other such elements, and utilizes an etched silicon substrate with an etch stop (16). P-type implants form p-type piezoresistive gage elements (18) and form p+ interconnections (20) to connect the sensor to external electrical devices. The diaphragm (14) is made from epitaxially-grown single-crystal silicon. Passivation nitride (22) can be used for additional dielectric isolation. One practice of the invention provides over-range cavity protection, and thus increased robustness, by forming an over-range stop for the diaphragm (14) through localized oxygen ion implantation and etching. IMAGE
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