semiconductor pressure transducers with polysilicon and single crystal membrane - dehnungsmesstreifen and manufacturing process used

摘要

A semiconductor pressure sensor (10) utilizes single-crystal silicon piezoresistive gage elements (18) dielectrically isolated by silicon oxide (16) from other such elements, and utilizes an etched silicon substrate (12). P-type implants form p-type piezoresistive gage elements (18) and form p+ interconnections (20) to connect the sensor to external electrical devices. The diaphragm (14) is made from polysilicon and is deposited on top of the gage elements (18). IMAGE