Semiconductor laser, especially a buried heterostructure laser for fiber-optic telecommunications, has active layer side faces and current blocking layer facets of specified inclinations to reduce leakage current

摘要

A semiconductor laser comprises active layer side faces and current blocking layer facets of specified different inclinations to constrict their spacing for leakage current reduction. A semiconductor laser comprises: (a) a first confinement layer (22) of a first conductivity type doped compound semiconductor having a mesa; (b) an active layer formed as a stripe on the mesa and having inclined side surfaces making an angle of 70-90 deg , exclusive, with the first confinement layer; (c) buried second conductivity type doped layers (27) formed on either side of the mesa; (d) first conductivity type current blocking layers (28) formed on the buried layers, each current blocking layer having an end in contact with a virtual surface formed by upwards projection of an active layer side surface and having a facet which extends downwards from the end at an angle of 55 deg to the top surface of the first confinement layer; and (e) a second conductivity type doped second confinement layer (24, 29) formed on the current blocking and active layers. An Independent claim is also included for production of the above semiconductor laser.