首页> 外国专利> Verifying integrity of decoding circuits of memory matrix by performing at least N or M writing of second words in storage in such way that every line and every column has at least registered second word

Verifying integrity of decoding circuits of memory matrix by performing at least N or M writing of second words in storage in such way that every line and every column has at least registered second word

机译:通过对存储中的第二个字进行至少N或M次写入来验证存储矩阵的解码电路的完整性,使得每一行和每一列至少具有注册的第二个字

摘要

After having written all words to a memory with a same first word (h00), it performs at least N or M writing of second words (h01 hFE) in the storage in such a way that every line and every column has at least registered second word. The second words are different from the first words. Then all words of the storage matrix are read.
机译:在将所有单词以相同的第一个单词(h00)写入存储器后,它以至少每一行和每一列至少记录第二个的方式在存储中执行第二个单词(h01 hFE)的至少N或M次写入字。第二个单词不同于第一个单词。然后读取存储矩阵的所有字。

著录项

  • 公开/公告号FR2787233A1

    专利类型

  • 公开/公告日2000-06-16

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS SA;

    申请/专利号FR19980015786

  • 发明设计人 NAURA DAVID;MONCADA FREDERIC;

    申请日1998-12-11

  • 分类号G11C23/00;G06F11/30;H03M13/00;

  • 国家 FR

  • 入库时间 2022-08-22 01:39:38

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