首页> 外国专利> Caromium-tantalum oxides (Cr-TaO.sub.x), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media

Caromium-tantalum oxides (Cr-TaO.sub.x), sputtering targets and thin film seedlayer/sublayers for thin film magnetic recording media

机译:氧化钽钽氧化物(Cr-TaO.x。),溅射靶材和薄膜磁记录介质的薄膜种子层/子层

摘要

Chromium-tantalum oxides (Cr-TaO.sub.x), including chromium- tantalum pentoxide (Cr-Ta.sub.2 O.sub.5), chromium-tantalum tetrioxide (Cr-Ta.sub. 2 O.sub.4 or Cr-TaO.sub.2), sputtering targets containing them, and their manufacture are disclosed. The targets are characterized by high density, uniform TaO.sub.x distribution, low impedance and stable plasma during the sputtering. The Cr-Ta oxides are used as a thin film sublayer to improve the coercivity and other characteristics of magnetic recording media deposited on metallic or non-metallic substrates used in hard disks for data storage.
机译:铬-钽氧化物(Cr-TaO.x。),包括五氧化二铬钽(Cr-Ta.sub.2 O.sub.5),四氧化铬-钽三氧化铬(Cr-Ta.sub。2 O.sub。)。公开了一种图4或Cr-TaO 2),包含它们的溅射靶及其制造。靶材的特征在于高密度,均匀的TaOx分布,低阻抗和溅射过程中稳定的等离子体。 Cr-Ta氧化物用作薄膜子层,以改善沉积在硬盘中用于数据存储的金属或非金属基板上的磁记录介质的矫顽力和其他特性。

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