2 or less. The sputtering target comprising an oxide phase dispersed in a Co or Co alloy phase enables the reduction in arcing, can achieve steady electrical discharge in a magnetron sputtering device, and produces a reduced amount of particles upon sputtering at a high density."/> SPUTTERING TARGET COMPRISING OXIDE PHASE DISPERSED IN CO OR CO ALLOY PHASE, MAGNETIC MATERIAL THIN FILM COMPRISING CO OR CO ALLOY PHASE AND OXIDE PHASE, AND MAGNETIC RECORDING MEDIUM PRODUCED USING THE MAGNETIC MATERIAL THIN FILM
首页> 外国专利> SPUTTERING TARGET COMPRISING OXIDE PHASE DISPERSED IN CO OR CO ALLOY PHASE, MAGNETIC MATERIAL THIN FILM COMPRISING CO OR CO ALLOY PHASE AND OXIDE PHASE, AND MAGNETIC RECORDING MEDIUM PRODUCED USING THE MAGNETIC MATERIAL THIN FILM

SPUTTERING TARGET COMPRISING OXIDE PHASE DISPERSED IN CO OR CO ALLOY PHASE, MAGNETIC MATERIAL THIN FILM COMPRISING CO OR CO ALLOY PHASE AND OXIDE PHASE, AND MAGNETIC RECORDING MEDIUM PRODUCED USING THE MAGNETIC MATERIAL THIN FILM

机译:溅射包含分散在CO或CO合金相中的氧化物相,包含CO或CO合金相和氧化物相的磁性材料膜以及使用磁性材料薄膜制造的磁性记录介质的溅射靶

摘要

Disclosed is a sputtering target comprising an oxide phase dispersed in a Co or Co alloy phase. The sputtering target comprises: a Co-containing metal matrix phase; and a phase containing SiO2 and having an oxide dispersed therein in an amount of 6 to 14 mol% so as to form particles (referred to as "an oxide phase", hereinafter). The sputtering target is characterized in that a Cr oxide is scattered in the oxide phase or the surface area of the oxide phase in an amount of not less than 0.3 mol% and less than 1.0 mol% in addition to components constituting the metal matrix phase and the oxide phase, and the average surface area of particles contained in the oxide phase is 2.0 μm2 or less. The sputtering target comprising an oxide phase dispersed in a Co or Co alloy phase enables the reduction in arcing, can achieve steady electrical discharge in a magnetron sputtering device, and produces a reduced amount of particles upon sputtering at a high density.
机译:公开了一种溅射靶,其包括分散在Co或Co合金相中的氧化物相。溅射靶包括:含Co的金属基质相;和含有SiO 2 的相以6〜14mol%的比例分散于氧化物中而形成粒子(以下称为“氧化物相”)。溅射靶的特征在于,除了构成金属基体相和金属的成分以外,Cr氧化物以不小于0.3mol%且小于1.0mol%的量分散在氧化物相或氧化物相的表面积中。氧化物相中包含的颗粒的平均表面积为2.0μm 2 以下。包含分散在Co或Co合金相中的氧化物相的溅射靶能够减少电弧,可以在磁控溅射装置中实现稳定的放电,并且在以高密度溅射时产生减少的颗粒量。

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