首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Martensitic phase transformation of magnetron sputtered nanostructured Ni-Mn-In ferromagnetic shape memory alloy thin films
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Martensitic phase transformation of magnetron sputtered nanostructured Ni-Mn-In ferromagnetic shape memory alloy thin films

机译:磁控溅射纳米结构Ni-Mn-In铁磁形状记忆合金薄膜的马氏体相变

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In this paper, we report the influence of film thickness on the first order martensitic phase transformation of Ni-Mn-In ferromagnetic shape memory alloy (FSMA) thin films synthesized by magnetron sputtering. The structural, magnetic, electrical and mechanical properties of these films of various thicknesses (90-655 nm) were systematically investigated. XRD analyses reveal that the film exhibit austenitic phase with L2(1) structure at room temperature. The grain size and crystallization extent increase with increase in film thickness. The temperature dependent magnetization and electrical measurements demonstrated the absence of phase transformation in the films with lower thickness similar to 90 nm which could be due to small grain size of these films. For thickness greater than 153 nm, the films show first order martensitic phase transition with thermal hysteresis width, which increases with further increase in film thickness. The field dependent magnetization curves also show the increase in saturation magnetization (S-M). Nanoindentation studies reveal the higher values of hardness of 7.2 GPa and elastic modulus of 190 GPa for the film thickness of 153 nm. The value of refrigeration capacity (RC) which is an important figure of merit has been found to be 155.04 mJ/cm(3). Maximum exchange bias of 0.0096 T and large magnetic entropy change Delta S-M = 15.2 mJ/cm(3) K (field 2 T) at martensitic transition has been obtained for film thickness of 655 nm which makes them useful for microelectromechanical systems (MEMS) applications. (C) 2015 Elsevier B.V. All rights reserved.
机译:在本文中,我们报道了膜厚对磁控溅射合成的Ni-Mn-In铁磁形状记忆合金(FSMA)薄膜的一阶马氏体相变的影响。系统地研究了这些各种厚度(90-655 nm)的薄膜的结构,磁,电和机械性能。 XRD分析表明,该薄膜在室温下具有L2(1)结构的奥氏体相。晶粒尺寸和结晶程度随着膜厚度的增加而增加。温度相关的磁化强度和电学测量结果表明,在厚度小于90 nm的较低厚度的薄膜中不存在相变,这可能是由于这些薄膜的晶粒较小所致。对于大于153 nm的厚度,薄膜显示出具有热滞后宽度的一阶马氏体相变,并随薄膜厚度的进一步增加而增加。场相关的磁化曲线还显示出饱和磁化强度(S-M)的增加。纳米压痕研究表明,对于153 nm的膜厚,硬度值较高,为7.2 GPa,弹性模量为190 GPa。已发现,作为重要性能指标的制冷量(RC)值为155.04 mJ / cm(3)。对于655 nm的膜厚,获得了马氏体转变时的最大交换偏置量0.0096 T和大的磁熵变Delta SM = 15.2 mJ / cm(3)K(场2 T),这使其对于微机电系统(MEMS)应用非常有用。 (C)2015 Elsevier B.V.保留所有权利。

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