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Method of etching ceramics of alumina/TiC with high density plasma
Method of etching ceramics of alumina/TiC with high density plasma
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机译:用高密度等离子体刻蚀氧化铝/ TiC陶瓷的方法
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摘要
A method of patterning a ceramic slider by plasma etching is disclosed. The ceramic slider contains alumina and titanium carbide. The method includes the steps of forming an etch pattern by depositing and developing a photoresist on the ceramic slider, and reactive ion etching a first surface on the ceramic slider using an etchant gas. The etchant gas generally includes argon, and a fluorine containing gas. The power source density, during etching ranges from about 0.5 W/(cm.sup.2) to 8 W/(cm.sup.2). Another aspect of the invention is a ceramic slider resulting from the method of the invention having a smoothness ranging from about 20 to 300 Å as measured by atomic force microscopy.
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