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Method for doped shallow junction formation using direct gas- phase doping
Method for doped shallow junction formation using direct gas- phase doping
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机译:利用直接气相掺杂形成掺杂浅结的方法
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摘要
Halides of a dopant species may be used as a dopant gas source to form shallow doped junctions using a direct gas-phase doping (GPD) process. These halides can also be combined with a carrier gas. Some advantages over conventional gas-phase doping processes include shallower junctions, shorter process times, lower processing temperature, and the elimination of a separate surface cleaning step for native oxide removal.
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