首页>
外国专利>
Repairable semiconductor memory circuit having parrel redundancy replacement wherein redundancy elements replace failed elements
Repairable semiconductor memory circuit having parrel redundancy replacement wherein redundancy elements replace failed elements
展开▼
机译:具有并行冗余替换的可修复半导体存储电路,其中冗余元件替换故障元件
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present disclosure relates to semiconductor memories and more particularly, to an improved method and apparatus for replacing defective row/column lines. In accordance with the present invention, a high replacement flexibility redundancy and method is employed to increase chip yield and prevent sense amplifier signal contention. Redundancy elements are integrated in at least two of a plurality of memory arrays, which don't share the sense amplifiers. Thus, no additional sense amplifiers are required. A defective row/column line in a first array or block is replaced with a redundant row/column line from its own redundancy. A corresponding row/column line whether defective or not is replaced in a second array or block, which does not share sense amplifiers with the first block. The corresponding row/column is replaced to mimic the redundancy replacement of the first block thereby increasing flexibility and yield as well as preventing sensing signal contention.
展开▼