Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy

摘要

A semiconductor light emitting device includes a second semiconductor layer, an active layer, a third semiconductor layer and a pair of electrodes. The second semiconductor layer is formed directly on the principal pane of a substrate or via a first semiconductor layer. The active layer is formed on the second semiconductor layer and has an energy band gap which is smaller than the energy band gap of the second semiconductor layer. The active layer is made of a semiconductor having an uniaxial anisotropy. The third semiconductor layer is formed on the active layer and has the energy band gap which is larger than the energy band gap of the active layer. The pair of electrodes supplies current to the second semiconductor layer, the active layer, and the third semiconductor layer in the film thickness direction. The film thickness direction of at least the active layer is different from the axis of the uniaxial anisotropy.