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Method of detecting a polishing endpoint layer of a semiconductor wafer which includes a non-reactive reporting specie

机译:检测包括非反应报告物质的半导体晶片的抛光终点层的方法

摘要

A method of planarizing a semiconductor wafer having a polishing endpoint layer that includes a sulfur-containing reporting specie includes the step of polishing a first side of the wafer in order to remove material from the wafer. The method also includes the step of detecting presence of the sulfur-containing reporting specie in the material removed from the wafer. The method further includes the step of terminating the polishing step in response to detecting presence of the sulfur-containing reporting specie. A shallow trench isolation process for fabricating a semiconductor wafer is also disclosed.
机译:一种平坦化具有抛光终点层的半导体晶片的方法,该抛光终点层包括含硫报告物质,该步骤包括抛光晶片的第一面以从晶片上去除材料的步骤。该方法还包括检测从晶片上去除的材料中是否存在含硫报告物质的步骤。该方法还包括响应于检测到含硫报告物质的存在而终止抛光步骤的步骤。还公开了用于制造半导体晶片的浅沟槽隔离工艺。

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