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Ballasting of high power silicon-germanium heterojunction biploar transistors
Ballasting of high power silicon-germanium heterojunction biploar transistors
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机译:大功率硅锗异质结双极晶体管的镇流器
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摘要
A ballasted transistor structure reduces thermal runaway. A heterojunction bipolar junction transistor array includes a plurality of transistors, each having an emitter, a base and a collector. Each of the bases is an alloy of silicon and germanium and each of the collectors and emitters is silicon. A ballast resistor, of doped silicon, that prevents thermal runaway, is electrically connected to each of the collectors.
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