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Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same
Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same
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机译:掺硼p型单晶碳化硅半导体及其制备方法
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摘要
A p-type silicon carbide semiconductor having a high carrier concentration and activation rate is provided by doping boron as an acceptor impurity in a single crystal silicon carbide. The boron occupies silicon sites in a crystal lattice of the single crystal silicon carbide.
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