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The SiC semiconductor equipment which possesses high channel mobility
The SiC semiconductor equipment which possesses high channel mobility
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机译:具有高沟道迁移率的SiC半导体设备
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摘要
An SiC channel region of a semiconductor configuration, as a result of misoriented epitaxial growth on its surface, is formed with mutually parallel elevations. The flow of electric current in the channel region is set parallel with the elevations. As a result, a high degree of charge-carrier mobility in the channel region is obtained.
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