The semiconductor equipment null which is produced making use of the production manner and the silicon germanium film of the silicon germanium film and the silicon germanium

摘要

PURPOSE:To increase the marginal film thickness of a silicon germanium mixed crystal film by doping an epitaxial film with oxygen in order to grow said silicon germanium mixed crystal film. CONSTITUTION:The fluctuation in marginal film thickness corresponding to the oxygen concentration in a silicon germanium mixed crystal film is represented in the figure. As shown in the figure, the marginal film thickness rapidly increases at the point wherein the oxygen concentration in the film exceeds 1019cm-3. Furthermore, a P type silicon germanium mixed crystal film can be formed simultaneously bringing about said effect by evaporating boron trioxide or methaboric acid at the temperature within the range of 470 deg.-700 deg.C during the growing time of the silicon germanium mixed crystal film.