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Semiconductor material containing medium-range ordered material in large volume ratio

机译:包含大体积比的中程有序材料的半导体材料

摘要

A high quality non-single-crystal silicon alloy material including regions of intermediate range order (IRO) silicon alloy material up to but not including the volume percentage required to form a percolation path within the material. The remainder of the material being either amorphous or a mixture of amorphous and microcrystalline materials. The materials were prepared by CVD using differing amounts of hydrogen dilution to produce materials containing differing amounts of IRO material. Preferably the material includes at least 8 volume percent of IRO material.
机译:一种高质量的非单晶硅合金材料,包括中等范围有序(IRO)硅合金材料的区域,但不包括在材料中形成渗流路径所需的体积百分比。该材料的其余部分是非晶态或非晶态和微晶态材料的混合物。通过CVD使用不同量的氢稀释量来制备材料,以产生包含不同量的IRO材料的材料。优选地,该材料包括至少8体积%的IRO材料。

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