Thin film formation manner of the ultraviolet ray hardening die adhesive and normal temperature lamination manner null of three dimensions LSI which use

摘要

PURPOSE: To provide a method for forming a thin film of a UV-curing adhesive and to provide the room-temperature stacking method for a three-dimensional LSI using it. ;CONSTITUTION: When an adhesive film is formed on a substratum silicon wafer, a thin film is formed on the substratum silicon wafer 11 by spin-coating a UV-curing adhesive, the adhesive is irradiated with ultraviolet rays anal hardened, and a substratum adhesive layer 23 is formed. Then, a (liquid) upper-part adhesive layer 24a is formed on the substratum adhesive layer 23 by newly spin-coating an adhesive. After that, a silicon wafer, for alignment, which is provided with a UV-transmitting part is overlapped, and it is positioned and compression-bonded. After that, ultraviolet rays 22 are irradiated via a UV- transmitting member 25 which has been formed on the silicon wafer for alignment, and a three-dimensional LSI is stacked at room temperature via a (solid) upper-part adhesive layer 24b formed by hardening the (liquid) upper-part adhesive layer 24a.;COPYRIGHT: (C)1994,JPO&Japio